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Efficient simulation of thermo-mechanical stress in the on-chip metallization of integrated power semiconductors

机译：集成功率半导体芯片内金属化过程中热机械应力的高效仿真

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Pham, Gimi; Ritter, Matthias; Pfost, Martin;
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年度 2017
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1. Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress [J] . Ritter Matthias, Pfost Martin Microelectronics & Reliability . 2017,第sepa期

机译：在循环热机械应力下用于集成LDMOS晶体管的片上金属化的老化传感器
2. On-Chip Sensors to Detect Impending Metallization Failure of LDMOS Transistors Under Repetitive Thermo-Mechanical Stress [J] . Matthias Ritter, Gimi Pham, Martin Pfost IEEE Transactions on Semiconductor Manufacturing . 2016,第3期

机译：片上传感器检测重复热机械应力下即将发生的LDMOS晶体管的金属化故障
3. Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies [J] . Tom Herrmann, Stefan Flachowsky, Ralf Illgen, Journal of Vacuum Science & Technology . 2010,第1期

机译：用于大规模集成互补金属氧化物半导体技术的绝缘体金属氧化物半导体场效应晶体管上非对称掺杂高性能硅的仿真
4. Efficient simulation of thermo-mechanical stress in the on-chip metallization of power semiconductors [C] . Pham Gimi, Pfost Martin International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems . 2015

机译：功率半导体片上金属化过程中热机械应力的有效模拟
5. Complementary metal oxide semiconductor radio frequency integrated circuit blocks for high power applications [D] . Sun, Tie 2011

机译：用于大功率应用的互补金属氧化物半导体射频集成电路块
6. Polymer Semiconductors: Phthalimide‐Based High Mobility Polymer Semiconductors for Efficient Nonfullerene Solar Cells with Power Conversion Efficiencies over 13 (Adv. Sci. 2/2019) [O] . Jianwei Yu, Peng Chen, Chang Woo Koh, 2019

机译：聚合物半导体：基于邻苯二甲酰亚胺的高迁移率聚合物半导体用于高效非富勒烯太阳能电池功率转换效率超过13％（Adv。Sci。2/2019）
7. Efficient modeling of metallic interconnects for thermo-mechanical simulation of SOFC stacks: homogenized behaviors and effect of contact [O] . Tadesse Molla Tesfaye, Kwok Kawai, Frandsen Henrik Lund 2016

机译：用于sOFC堆的热机械模拟的金属互连的有效建模：均匀化行为和接触效应
8. Switch-Level Timing Simulation of MOS VLSI (Metal-Oxide-Semiconductor Very Large-Scale Integrated) Circuits. [R] . Rao, V. B. 1985

机译：mOs VLsI（金属氧化物半导体超大规模集成电路）的开关级时序仿真。

Efficient simulation of thermo-mechanical stress in the on-chip metallization of integrated power semiconductors

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